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Category:G11C11/16
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Pages in category "G11C11/16"
The following 73 pages are in this category, out of 73 total.
1
- 17456088. Memory Device with Spin-Harvesting Structure simplified abstract (International Business Machines Corporation)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17526646. MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING simplified abstract (International Business Machines Corporation)
- 17534485. MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) WITH PRESERVED UNDERLYING DIELECTRIC LAYER simplified abstract (International Business Machines Corporation)
- 17541401. DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550464. PARAMAGNETIC HEXAGONAL METAL PHASE COUPLING SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17577040. MEMORY DEVICES, CIRCUITS AND METHODS OF ADJUSTING A SENSING CURRENT FOR THE MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17690728. BIT-LINE RESISTANCE REDUCTION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17723845. MAGNETIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17736652. MEMORY DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17751898. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17806594. SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808561. MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17814057. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834074. PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17870545. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894554. MEMORY DEVICE INCLUDING MERGED WRITE DRIVER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17931464. MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932691. MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract (International Business Machines Corporation)
- 17945738. MAGNETO RESISTIVE ELEMENT simplified abstract (TDK Corporation)
- 17956938. SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract (International Business Machines Corporation)
- 17970788. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17981734. Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18047820. INSPECTION DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18048455. MRAM DEVICE WITH OCTAGON PROFILE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18051857. MAGNETIC MEMORY DEVICES AND METHODS FOR INITIALIZING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18064367. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18447856. Memory Device With Source Lines in Parallel simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18464350. MAGNETIC MEMORY simplified abstract (Kioxia Corporation)
- 18466727. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18484466. MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519085. MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520427. MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18545626. MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
A
B
I
- International business machines corporation (20240099148). MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract
- International business machines corporation (20240105244). STACKED FET WITH THREE-TERMINAL SOT MRAM simplified abstract
- International business machines corporation (20240112712). SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract
- International business machines corporation (20240135978). MRAM DEVICE WITH OCTAGON PROFILE simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
K
S
T
- Taiwan semiconductor manufacturing co., ltd. (20240099149). MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
U
- US Patent Application 17804795. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE simplified abstract
- US Patent Application 17824806. CROSS-POINT ARRAY REFRESH SCHEME simplified abstract
- US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract
- US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18234147. MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18358202. MEMORY ARRAY TEST METHOD AND SYSTEM simplified abstract
- US Patent Application 18361832. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18447383. MRAM Fabrication and Device simplified abstract