MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18520427 titled 'MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME

Simplified Explanation

The abstract describes a method for forming a semiconductor structure, specifically focusing on a magnetic tunneling junction (MTJ) and a conductive capping layer. The method involves depositing dielectric layers, planarization processes, patterning, and electrode layer deposition to create a coplanar surface.

Method for forming semiconductor structure:

   * Receive workpiece with MTJ and conductive capping layer
   * Deposit first dielectric layer and perform planarization process
   * Pattern dielectric layer to expose capping layer
   * Remove capping layer and deposit electrode layer
   * Perform second planarization process to create coplanar surfaces

Potential Applications

This technology could be applied in: - Magnetic storage devices - Magnetic sensors - Spintronics devices

Problems Solved

- Improving performance of MTJs - Enhancing reliability of semiconductor structures - Facilitating integration of different materials in devices

Benefits

- Increased efficiency in data storage and processing - Enhanced functionality of magnetic devices - Improved manufacturing processes for semiconductor structures

Potential Commercial Applications

Optimizing semiconductor structures for: - Data storage industry - Electronics manufacturing sector - Research and development in magnetic technologies

Possible Prior Art

Prior methods for forming semiconductor structures with MTJs and capping layers may exist, but specific details would need to be researched to determine if any directly relate to this patent application.

Unanswered Questions

How does this method compare to existing techniques for forming semiconductor structures with MTJs and capping layers?

This article does not provide a direct comparison to existing techniques, so it is unclear how this method differs or improves upon current practices.

What specific materials and processes are used in the deposition and planarization steps of this method?

The article mentions general steps such as depositing dielectric layers and performing planarization processes, but it does not detail the specific materials or techniques utilized in these steps.

Original Abstract Submitted

Semiconductor structure and methods of forming the same are provided. An exemplary method includes receiving a workpiece including a magnetic tunneling junction (MTJ) and a conductive capping layer disposed on the MTJ, depositing a first dielectric layer over the workpiece, performing a first planarization process to the first dielectric layer, and after the performing of the first planarization process, patterning the first dielectric layer to form an opening exposing a top surface of the conductive capping layer, selectively removing the conductive capping layer. The method also includes depositing an electrode layer to fill the opening and performing a second planarization process to the workpiece such that a top surface of the electrode layer and a top surface of the first dielectric layer are coplanar.

18520427. MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Contents

MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME

Organization Name

Inventor(s)