Apple inc. (20240107892). MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE simplified abstract
Contents
- 1 MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE
Organization Name
Inventor(s)
Jason Janesky of Campbell CA (US)
Jodi M. Iwata-harms of San Carlos CA (US)
Savas Gider of San Jose CA (US)
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107892 titled 'MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE
Simplified Explanation
The enclosed embodiments are directed to a magnetoresistance (MR) sensor with a biased free layer for improved stability of magnetic performance. In an embodiment, an MR sensor comprises: a first antiferromagnetic (AF) pinning layer; a magnetic fixed layer disposed on the first AF layer; a tunnel barrier disposed on the magnetic fixed layer; a magnetic coupled free layer disposed on the tunnel barrier; an AF coupling layer disposed on the magnetic coupled free layer; a magnetic pinned layer disposed on the AF coupling layer; and a second AF pinning layer disposed on the magnetic pinned layer. In an embodiment, a method of unpinning a pinned free layer uses a current pulse through the MR sensor to self-heat above a blocking temperature of the AF pinning layer, and then reading the MR sensor after the current pulse is reduced or removed and the MR sensor cools back below the blocking temperature.
- The MR sensor includes a biased free layer for improved stability of magnetic performance.
- The method of unpinning a pinned free layer involves self-heating above a blocking temperature using a current pulse.
Potential Applications
The technology can be applied in magnetic sensors, data storage devices, and magnetic random-access memory (MRAM) systems.
Problems Solved
The technology solves the problem of instability in magnetic performance of MR sensors, especially in high-density data storage applications.
Benefits
The benefits of this technology include improved stability, reliability, and performance of MR sensors in various applications.
Potential Commercial Applications
Potential commercial applications of this technology include magnetic sensor manufacturing, data storage device production, and MRAM system development.
Possible Prior Art
One possible prior art is the use of antiferromagnetic pinning layers in MR sensors for stabilizing magnetic performance.
Unanswered Questions
How does the biased free layer improve stability in MR sensors?
The biased free layer helps maintain a consistent magnetic state, reducing fluctuations in performance.
What are the specific parameters for the current pulse used in the method of unpinning a pinned free layer?
The specific parameters for the current pulse, such as amplitude and duration, may vary depending on the design of the MR sensor and the materials used.
Original Abstract Submitted
the enclosed embodiments are directed to a magnetoresistance (mr) sensor with a biased free layer for improved stability of magnetic performance. in an embodiment, an mr sensor comprises: a first antiferromagnetic (af) pinning layer; a magnetic fixed layer disposed on the first af layer; a tunnel barrier disposed on the magnetic fixed layer; a magnetic coupled free layer disposed on the tunnel barrier; a af coupling layer disposed on the magnetic coupled free layer; a magnetic pinned layer disposed on the af coupling layer; and a second af pinning layer disposed on the magnetic pinned layer. in an embodiment, a method of unpinning a pinned free layer uses a current pulse through the mr sensor to self-heat above a blocking temperature of the af pinning layer, and then reading the mr sensor after the current pulse is reduced or removed and the mr sensor cools back below the blocking temperature.
