18545626. MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL
Organization Name
Inventor(s)
Daeshik Kim of Hwaseong-si (KR)
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18545626 titled 'MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL
Simplified Explanation
The memory device described in the patent application includes a magnetic memory element and various components to store data efficiently.
- Memory device with magnetic memory element
- Memory cell array with first and second regions
- Second region stores value of a write voltage
- Write voltage based on value of reference resistor
- Voltage generator generates code value based on write voltage
- Write driver drives write current based on code value
- Write current used to store data in first region
Potential Applications
The technology described in the patent application could be used in various memory storage devices, such as hard drives, solid-state drives, and other data storage systems.
Problems Solved
This technology solves the problem of efficiently storing data in memory devices by using a magnetic memory element and components that work together to drive write currents based on specific values.
Benefits
The benefits of this technology include faster data storage, improved efficiency in memory devices, and potentially lower power consumption compared to traditional memory storage methods.
Potential Commercial Applications
The technology described in the patent application could have commercial applications in the data storage industry, specifically in the development of faster and more efficient memory devices for consumer electronics, servers, and other data storage systems.
Possible Prior Art
One possible prior art for this technology could be the use of magnetic memory elements in memory devices, as well as the development of components to drive write currents based on specific values in memory storage systems.
Unanswered Questions
How does this technology compare to existing memory storage methods?
This article does not provide a direct comparison between this technology and existing memory storage methods in terms of performance, efficiency, or cost.
What are the potential limitations or challenges of implementing this technology in practical applications?
This article does not address any potential limitations or challenges that may arise when implementing this technology in real-world memory storage devices, such as compatibility issues, scalability, or manufacturing costs.
Original Abstract Submitted
Disclosed is a memory device including a magnetic memory element. The memory device includes a memory cell array including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor for determining whether a programmed memory cell is in a parallel state or anti-parallel state, a voltage generator configured to generate a code value based on the value of the write voltage, and a write driver configured to drive a write current based on the code value, the write current being a current for storing data in the first region.
