17806594. SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Koichi Motoyama of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17806594 titled 'SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES

Simplified Explanation

The patent application describes a memory device that includes a magnetic tunnel junction (MTJ) pillar between a top electrode and a bottom electrode. The device utilizes various layers and materials to improve its performance and functionality.

  • The memory device includes a magnetic tunnel junction (MTJ) pillar, which is a key component for storing and retrieving data.
  • An amorphous dielectric hardmask is in contact with a portion of the uppermost surface of the MTJ pillar. This hardmask helps protect and stabilize the MTJ pillar.
  • A metal layer is disposed on opposite sidewalls of the amorphous dielectric hardmask and in contact with another portion of the uppermost surface of the MTJ pillar. This metal layer serves as the top electrode of the memory device.
  • A dielectric underlayer is in contact with a portion of the bottommost surface of the MTJ pillar. This underlayer provides insulation and support for the MTJ pillar.
  • Another portion of the metal layer is disposed on opposite sidewalls of the dielectric underlayer and in contact with another portion of the bottommost surface of the MTJ pillar. This metal layer acts as the bottom electrode of the memory device.

Potential applications of this technology:

  • Memory devices: The described structure and materials can be used in various memory devices, such as non-volatile memory or random-access memory.
  • Data storage: The improved memory device can be used for storing and retrieving data in electronic devices, such as computers, smartphones, or IoT devices.

Problems solved by this technology:

  • Stability and protection: The amorphous dielectric hardmask helps stabilize the MTJ pillar and protect it from external factors, improving the reliability and longevity of the memory device.
  • Insulation and support: The dielectric underlayer provides insulation and support for the MTJ pillar, reducing the risk of interference and enhancing the performance of the memory device.

Benefits of this technology:

  • Improved performance: The described structure and materials enhance the performance of the memory device, allowing for faster and more efficient data storage and retrieval.
  • Enhanced reliability: The stability and protection provided by the amorphous dielectric hardmask increase the reliability and lifespan of the memory device.
  • Reduced interference: The dielectric underlayer helps reduce interference and improve the overall functionality of the memory device.


Original Abstract Submitted

A memory device includes a magnetic tunnel junction (MTJ) pillar between a top electrode and a bottom electrode. An amorphous dielectric hardmask is in contact with a first portion of an uppermost surface of the MTJ pillar. A first portion of a metal layer is disposed on opposite sidewalls of the amorphous dielectric hardmask and in contact with a second portion of the uppermost surface of the MTJ pillar extending outwards from the amorphous dielectric hardmask for providing the top electrode. A dielectric underlayer is in contact with a first portion of a bottommost surface of the MTJ pillar, while a second portion of the metal layer is disposed on opposite sidewalls of the dielectric underlayer. The second portion of the metal layer is in contact with a second portion of the bottommost surface of the MTJ pillar extending outwards from the dielectric underlayer for providing the bottom electrode.

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