US Patent Application 18447383. MRAM Fabrication and Device simplified abstract
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Contents
MRAM Fabrication and Device
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jung-Tang Wu of Kaohsiung (TW)
Han-Ting Tsai of Kaoshiung (TW)
MRAM Fabrication and Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447383 titled 'MRAM Fabrication and Device
Simplified Explanation
The abstract describes a patent application related to a magnetoresistive random access memory (MRAM) device.
- The patent application proposes using a film of titanium nitride with a (111) crystal structure as the top electrode of the MRAM device.
- This is a departure from the conventional use of tantalum, tantalum nitride, or a multilayer of tantalum and tantalum nitride as the top electrode material.
- The use of titanium nitride with a (111) crystal structure aims to improve the performance and efficiency of the MRAM device.
- The patent application suggests that this new configuration can enhance the magnetic tunnel junction (MTJ) in the MRAM device.
- The proposed innovation may lead to advancements in MRAM technology, potentially enabling faster and more reliable data storage and retrieval.
Original Abstract Submitted
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
