18064367. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Ung Hwan Pi of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18064367 titled 'MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a magnetic memory device that consists of a conductive line, a magnetic line, and a magnetic pattern. The magnetic pattern is positioned between the conductive line and the magnetic line and has sidewalls aligned with the sidewalls of the conductive line.
- The magnetic memory device includes a conductive line and a magnetic line.
- A magnetic pattern is placed between the conductive line and the magnetic line.
- The magnetic pattern has sidewalls aligned with the sidewalls of the conductive line.
- The conductive line and magnetic line intersect each other.
- The magnetic pattern helps in storing and retrieving data in the memory device.
Potential Applications
- Data storage devices such as hard drives and solid-state drives.
- Magnetic random-access memory (MRAM) technology.
- Magnetic sensors and actuators.
- Magnetic logic devices.
Problems Solved
- Provides a compact and efficient magnetic memory device.
- Enables reliable storage and retrieval of data.
- Enhances the performance and speed of data storage devices.
- Facilitates the integration of magnetic memory technology into various applications.
Benefits
- Improved data storage density.
- Faster data access and retrieval.
- Enhanced reliability and durability.
- Compatibility with existing magnetic memory technologies.
- Potential for smaller and more efficient electronic devices.
Original Abstract Submitted
A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.