17814057. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Rahul Mishra of Singapore (SG)

Hyunsoo Yang of Singapore (SG)

Ung Hwan Pi of Hwaseong-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17814057 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The abstract describes a semiconductor memory device that utilizes spin-orbit coupling (SOC) to provide a spin-orbit torque to data storage patterns. The device includes data storage patterns with first and second sides, a SOC channel layer in contact with the first sides, read access transistors connected to the second sides, a write access transistor connected to one end of the SOC channel layer, and a bit line connected to the other end of the SOC channel layer. Each data storage pattern consists of a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

  • The semiconductor memory device utilizes spin-orbit coupling (SOC) to provide a spin-orbit torque to data storage patterns.
  • The data storage patterns have first and second sides, with a SOC channel layer in contact with the first sides.
  • Read access transistors are connected to the second sides of the data storage patterns.
  • A write access transistor is connected to one end of the SOC channel layer.
  • A bit line is connected to the other end of the SOC channel layer.
  • Each data storage pattern consists of a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

Potential Applications

  • This semiconductor memory device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be applied in data storage systems, allowing for faster and more efficient data access and retrieval.

Problems Solved

  • The use of spin-orbit coupling (SOC) in the memory device provides a spin-orbit torque, which can improve the performance and reliability of data storage patterns.
  • The inclusion of an oxygen reservoir layer helps to stabilize the free layer, reducing the risk of data loss or corruption.

Benefits

  • The SOC channel layer and spin-orbit torque enable faster and more energy-efficient data storage and retrieval.
  • The inclusion of an oxygen reservoir layer enhances the stability and reliability of the data storage patterns.
  • The semiconductor memory device offers a compact and efficient solution for data storage in electronic devices.


Original Abstract Submitted

A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

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