Taiwan semiconductor manufacturing co., ltd. (20240099149). MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract
Contents
- 1 MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yu-Feng Yin of Hsinchu County (TW)
Chien-Hua Huang of Miaoli County (TW)
Chung-Te Lin of Tainan City (TW)
MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099149 titled 'MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor structure with a magnetic tunneling junction (MTJ) and a conductive capping layer. The method involves depositing dielectric layers, planarization processes, patterning the dielectric layer to expose the capping layer, removing the capping layer, depositing an electrode layer, and performing a second planarization process to make the surfaces coplanar.
- Method for forming a semiconductor structure with a magnetic tunneling junction (MTJ) and a conductive capping layer
- Involves depositing dielectric layers, planarization processes, patterning, removing the capping layer, depositing an electrode layer, and planarizing again to make surfaces coplanar
Potential Applications
This technology could be applied in the field of magnetic memory devices, such as magnetic random-access memory (MRAM) and magnetic sensors.
Problems Solved
This technology solves the problem of efficiently forming semiconductor structures with MTJs and conductive capping layers while ensuring coplanarity of different layers.
Benefits
The benefits of this technology include improved performance and reliability of magnetic memory devices, as well as enhanced manufacturing efficiency.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of advanced MRAM devices for use in various electronic systems.
Possible Prior Art
One possible prior art could be methods for forming semiconductor structures with MTJs and conductive layers using different patterning and planarization techniques.
Unanswered Questions
How does this method compare to existing techniques for forming semiconductor structures with MTJs and conductive capping layers?
This article does not provide a direct comparison to existing techniques, so it is unclear how this method differs in terms of efficiency, cost, or performance.
What are the specific performance improvements that can be expected from using this method in magnetic memory devices?
The article does not detail the specific performance enhancements that can be achieved by implementing this method, leaving the potential benefits somewhat vague.
Original Abstract Submitted
semiconductor structure and methods of forming the same are provided. an exemplary method includes receiving a workpiece including a magnetic tunneling junction (mtj) and a conductive capping layer disposed on the mtj, depositing a first dielectric layer over the workpiece, performing a first planarization process to the first dielectric layer, and after the performing of the first planarization process, patterning the first dielectric layer to form an opening exposing a top surface of the conductive capping layer, selectively removing the conductive capping layer. the method also includes depositing an electrode layer to fill the opening and performing a second planarization process to the workpiece such that a top surface of the electrode layer and a top surface of the first dielectric layer are coplanar.
