17945738. MAGNETO RESISTIVE ELEMENT simplified abstract (TDK Corporation)
Contents
MAGNETO RESISTIVE ELEMENT
Organization Name
Inventor(s)
Kazuumi Inubushi of Tokyo (JP)
Katsuyuki Nakada of Tokyo (JP)
MAGNETO RESISTIVE ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17945738 titled 'MAGNETO RESISTIVE ELEMENT
Simplified Explanation
A magneto-resistive element has been developed with specific layers and components to enhance its performance. The key features include:
- First ferromagnetic layer containing a Heusler alloy with Co
- Second ferromagnetic layer
- Nonmagnetic layer between the first and second ferromagnetic layers
- Buffer layer in contact with the first ferromagnetic layer
- Buffer layer composed of first, second, and third atoms other than Co
- Buffer layer does not contain Co or contains it at a lower proportion compared to other atoms
- Atomic radius of atoms in the buffer layer is within a specific range relative to a reference atom
Potential Applications: - Data storage devices - Magnetic sensors - Magnetic random-access memory (MRAM)
Problems Solved: - Improved sensitivity and efficiency of magneto-resistive elements - Enhanced performance in magnetic applications
Benefits: - Higher data storage capacity - Faster data transfer rates - Increased reliability and durability
Potential Commercial Applications: - Electronics industry - Information technology sector - Research and development organizations
Possible Prior Art: - Previous patents related to magneto-resistive elements - Studies on Heusler alloys in magnetic devices
Unanswered Questions:
1. How does the specific composition of the buffer layer contribute to the overall performance of the magneto-resistive element? 2. Are there any limitations or challenges in scaling up the production of magneto-resistive elements with these specialized layers and components?
Original Abstract Submitted
A magneto resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and a buffer layer. The nonmagnetic layer is between the first ferromagnetic layer and second ferromagnetic layer. The buffer layer is in contact with the first ferromagnetic layer. The first ferromagnetic layer contains a Heusler alloy containing Co. The buffer layer contains at least a first atom, a second atom, and a third atom other than Co as main components. The buffer layer does not contain Co or contains Co at a proportion less than a compositional proportion of the first atom, the second atom, and the third atom. In a case where an atomic radius of any one atom of the first atom, the second atom, and the third atom is taken as a reference, an atomic radius of another atom thereof is 95% or less or 105% or more of the reference.
