17456088. Memory Device with Spin-Harvesting Structure simplified abstract (International Business Machines Corporation)

Memory Device with Spin-Harvesting Structure

Organization Name

International Business Machines Corporation

Inventor(s)

Christopher Safranski of Yorktown Heights NY (US)

Jonathan Zanhong Sun of Shrub Oak NY (US)

Memory Device with Spin-Harvesting Structure - A simplified explanation of the abstract

This abstract first appeared for US patent application 17456088 titled 'Memory Device with Spin-Harvesting Structure

Simplified Explanation

The patent application describes a memory device that includes a magnetic tunnel junction and a nonmagnetic metallic spin harvesting conductor. The magnetic tunnel junction can be displaced from a center position of the device, and the nonmagnetic metallic spin harvesting conductor collects spin current from an electrically insulating spin conductor. The device also includes a spin orbit conduction channel.

• The memory device includes a magnetic tunnel junction and a nonmagnetic metallic spin harvesting conductor.
• The magnetic tunnel junction can be displaced from a center position of the device.
• The nonmagnetic metallic spin harvesting conductor has a larger lateral dimension than the magnetic tunnel junction.
• The nonmagnetic metallic spin harvesting conductor collects spin current from an electrically insulating spin conductor.
• The device also includes a spin orbit conduction channel.

Potential Applications

• Memory devices
• Spintronics
• Data storage

Problems Solved

• Enhancing the efficiency of spin current collection
• Improving the performance of memory devices

Benefits

• Increased efficiency of spin current collection
• Improved performance of memory devices
• Potential for higher data storage capacity

Original Abstract Submitted

A memory device includes a first terminal and a second terminal; a magnetic tunnel junction coupled to the second terminal; wherein the magnetic tunnel junction comprises a magnetic free layer, and the magnetic tunnel junction is configured to be displaced by a plurality of distances from a center position of the device; a nonmagnetic metallic spin harvesting conductor coupled to the magnetic tunnel junction; wherein the nonmagnetic metallic spin harvesting conductor has a lateral dimension that is larger than that of the magnetic tunnel junction; an electrically insulating spin conductor coupled to the nonmagnetic metallic spin harvesting conductor; wherein the electrically insulating spin conductor has relatively less electrical conductivity than the nonmagnetic metallic spin harvesting conductor; wherein the nonmagnetic metallic spin harvesting conductor collects spin current from the electrically insulating spin conductor; and a spin orbit conduction channel coupled to the electrically insulating spin conductor and to the first terminal.