US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
Contents
- 1 MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Original Abstract Submitted
MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT
Organization Name
Inventor(s)
MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232941 titled 'MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT
Simplified Explanation
The abstract describes a magnetization rotational element with a spin-orbit torque wiring and a ferromagnetic layer.
- The magnetization rotational element includes a spin-orbit torque wiring and a first ferromagnetic layer.
- The spin-orbit torque wiring is located in a first direction with respect to the spin-orbit torque wiring.
- Spins are injected from the spin-orbit torque wiring into the first ferromagnetic layer.
- The spin-orbit torque wiring has multiple spin generation layers and insertion layers.
- The insertion layers have a lower electrical resistivity than the spin generation layers.
Original Abstract Submitted
A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
