US Patent Application 18361832. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract

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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsiang-Ku Shen of Hsinchu City (TW)

Liang-Wei Wang of Hsinchu City (TW)

Dian-Hau Chen of Hsinchu (TW)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361832 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes various components such as a substrate, metal line, dielectric layer, bottom electrode via, bottom electrode, magnetic tunneling junction stack, and top electrode.

  • The device has a substrate with a metal line embedded in it.
  • A dielectric layer is placed on top of the substrate.
  • A bottom electrode via extends through the dielectric layer and connects to the metal line.
  • A bottom electrode is placed on top of the bottom electrode via.
  • A magnetic tunneling junction stack is placed on top of the bottom electrode.
  • A top electrode is placed on top of the magnetic tunneling junction stack.
  • The bottom electrode via is made up of two different metals - a first metal in the lower portion and a second metal in the upper portion.


Original Abstract Submitted

A semiconductor device includes a substrate with a metal line embedded in the substrate, a dielectric layer disposed on the substrate, a bottom electrode via extending through the dielectric layer and landing on a top surface of the metal line, a bottom electrode disposed on a top surface of the bottom electrode via, a magnetic tunneling junction stack disposed on a top surface of the bottom electrode, and a top electrode disposed on the magnetic tunneling junction stack. A lower portion of the bottom electrode via includes a first metal, and an upper portion of the bottom electrode via includes a second metal that is different from the first metal.

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