17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ashim Dutta of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17542696 titled 'SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY

Simplified Explanation

The abstract describes a patent application for a subtractive top via used as a bottom electrode contact for an embedded memory structure. The process involves depositing a conductive material on an underlayer and etching it to create an extended via and a conductive pad as a single unit. The extended via is positioned next to the memory structure and serves as the first contact for the memory structure.

  • The invention involves a subtractive top via used as a bottom electrode contact for embedded memory structures.
  • A conductive material is deposited on an underlayer and then etched to form an extended via and a conductive pad.
  • The extended via is positioned adjacent to the memory structure, serving as the first contact for the memory structure.
  • This technology provides a more efficient and integrated approach to forming bottom electrode contacts for embedded memory structures.

Potential Applications

This technology can be applied in various industries and applications, including:

  • Semiconductor manufacturing
  • Memory chip production
  • Embedded memory structures in electronic devices

Problems Solved

The technology addresses the following problems:

  • Complex and time-consuming processes for forming bottom electrode contacts
  • Lack of integration between bottom electrode contacts and memory structures
  • Inefficient use of materials and resources in the manufacturing process

Benefits

The benefits of this technology include:

  • Simplified and streamlined process for forming bottom electrode contacts
  • Improved integration between bottom electrode contacts and memory structures
  • Enhanced efficiency and cost-effectiveness in the manufacturing process


Original Abstract Submitted

Embodiments of the invention include a subtractive top via as a bottom electrode contact for an embedded memory structure. Forming the bottom electrode contact includes depositing a conductive material on an underlayer and etching the conductive material to form an extended via and a conductive pad as an integral unit. The extended via extends from the conductive pad such that the extended via is adjacent to a memory structure, the extended via being formed as a first contact for the memory structure.

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