18484466. MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ji-Feng Ying of Hsinchu City (TW)

Jhong-Sheng Wang of Taichung City (TW)

Tsann Lin of Hsinchu (TW)

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18484466 titled 'MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE

Simplified Explanation

The abstract describes a memory device that includes various components such as bit lines, auxiliary lines, selectors, and memory cells. The word lines intersect with the bit lines, while the auxiliary lines are positioned between the word lines and the bit lines. The selectors are inserted between the bit lines and the auxiliary lines, and the memory cells are inserted between the word lines and the auxiliary lines.

  • The memory device includes bit lines, auxiliary lines, selectors, and memory cells.
  • Word lines intersect with the bit lines.
  • Auxiliary lines are positioned between the word lines and the bit lines.
  • Selectors are inserted between the bit lines and the auxiliary lines.
  • Memory cells are inserted between the word lines and the auxiliary lines.

Potential Applications:

  • This memory device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be utilized in data storage systems, allowing for efficient and reliable memory storage.

Problems Solved:

  • The memory device solves the problem of efficient memory storage by providing a structure that allows for the intersection of word lines and bit lines.
  • It addresses the need for reliable data storage by incorporating memory cells and selectors in the design.

Benefits:

  • The memory device offers improved performance and speed in data storage and retrieval.
  • It provides a compact and efficient memory storage solution.
  • The device ensures reliable and accurate data storage, reducing the risk of data loss or corruption.


Original Abstract Submitted

A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.