17932691. MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract (International Business Machines Corporation)
Contents
- 1 MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
Organization Name
International Business Machines Corporation
Inventor(s)
Hsueh-Chung Chen of Cohoes NY (US)
Koichi Motoyama of Clifton Park NY (US)
Chanro Park of Clifton Park NY (US)
Yann Mignot of Slingerlands NY (US)
Chih-Chao Yang of Glenmont NY (US)
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17932691 titled 'MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
Simplified Explanation
The semiconductor device described in the abstract includes a memory with a magnetic tunnel junction (MTJ) stack, an upper electrode, and dielectric layers.
- The semiconductor device includes a memory with a magnetic tunnel junction (MTJ) stack.
- The memory has an upper electrode on the MTJ stack.
- At least one dielectric layer is formed around the memory.
- A top metal layer contact hole is formed in the dielectric layer.
- A dielectric liner layer is formed in the top metal contact hole.
- A top metal layer contact is in the top metal layer contact hole.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- Magnetic random-access memory (MRAM)
- Data storage devices
Problems Solved
This technology helps in:
- Improving memory storage capacity
- Enhancing data retention and reliability
- Reducing power consumption in memory devices
Benefits
The benefits of this technology include:
- Faster data access and retrieval
- Increased durability and longevity of memory devices
- Enhanced performance and efficiency in data storage
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art for this technology could be the development of MRAM technology in the semiconductor industry.
What are the specific materials used in the dielectric layer of the semiconductor device?
The specific materials used in the dielectric layer of the semiconductor device are not mentioned in the abstract.
How does the formation of the dielectric liner layer impact the performance of the memory device?
The formation of the dielectric liner layer helps in improving the electrical properties and reliability of the memory device by providing a barrier between the top metal layer contact and the surrounding dielectric material.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes a memory including a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and an upper electrode on the MTJ stack. The semiconductor device also includes at least one dielectric layer formed around the memory, wherein a top metal layer contact hole is formed in the at least one dielectric layer, a dielectric liner layer formed in the top metal contact hole, and a top metal layer contact in the top metal layer contact hole.
