International business machines corporation (20240112712). SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract
Contents
- 1 SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
Organization Name
international business machines corporation
Inventor(s)
Pouya Hashemi of Purchase NY (US)
Christopher Safranski of Yorktown Heights NY (US)
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112712 titled 'SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
Simplified Explanation
The patent application describes a magnetic random access memory (MRAM) apparatus with a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) layer beneath the MTJ stack, and a dielectric pillar supporting the SOT layer and MTJ stack, where the SOT layer has a stepped profile.
- Magnetic random access memory (MRAM) apparatus
- Includes a magnetic tunnel junction (MTJ) stack
- Contains a spin-orbit torque (SOT) layer below the MTJ stack
- Utilizes a dielectric pillar to support the SOT layer and MTJ stack
- The SOT layer features a stepped profile
Potential Applications
This technology could be applied in:
- Data storage devices
- Magnetic sensors
- Non-volatile memory systems
Problems Solved
- Enhanced data storage capabilities
- Improved energy efficiency
- Increased data transfer speeds
Benefits
- Higher performance levels
- Greater reliability
- Reduced power consumption
Potential Commercial Applications
Optimizing MRAM technology for:
- Consumer electronics
- Industrial automation
- Automotive systems
Possible Prior Art
One example of prior art in this field is the use of perpendicular magnetic anisotropy (PMA) in MRAM devices to improve stability and performance.
Unanswered Questions
How does the stepped profile of the SOT layer contribute to the overall functionality of the MRAM apparatus?
The stepped profile of the SOT layer may help to control the spin-orbit torque effect more precisely, leading to improved efficiency and reliability in data storage operations.
What are the specific materials used in the dielectric pillar to support the SOT layer and MTJ stack?
The materials chosen for the dielectric pillar must have suitable insulating properties and mechanical stability to ensure proper functioning of the MRAM apparatus.
Original Abstract Submitted
a magnetic random access memory (mram) apparatus includes a magnetic tunnel junction (mtj) stack; a spin-orbit-torque (sot) layer that underlies the mtj stack; and a dielectric pillar that underlies the sot layer and the mtj stack. the sot layer has a stepped profile.
