Samsung electronics co., ltd. (20240119983). MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL simplified abstract
Contents
- 1 MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL
Organization Name
Inventor(s)
Daeshik Kim of Hwaseong-si (KR)
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240119983 titled 'MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL
Simplified Explanation
The memory device described in the patent application includes a magnetic memory element and a memory cell array with two regions, one for storing data and the other for storing a value related to the write voltage. A voltage generator generates a code value based on the write voltage, and a write driver uses this code value to drive a write current for storing data in the memory cell array.
- Memory device with magnetic memory element
- Memory cell array with two regions for storing data and write voltage value
- Voltage generator generates code value based on write voltage
- Write driver uses code value to drive write current for storing data
Potential Applications
The technology described in the patent application could be applied in:
- Data storage devices
- Magnetic memory systems
- Embedded systems
Problems Solved
This technology addresses the following issues:
- Efficient data storage
- Reliable memory cell programming
- Improved memory device performance
Benefits
The benefits of this technology include:
- Enhanced data storage capabilities
- Increased memory device reliability
- Improved overall system performance
Potential Commercial Applications
The technology could be utilized in various commercial applications such as:
- Consumer electronics
- Industrial automation
- Automotive systems
Possible Prior Art
One possible prior art for this technology could be:
- Magnetic memory devices with write voltage control
Unanswered Questions
How does the write voltage value affect the programming of memory cells in the memory cell array?
The write voltage value is crucial in determining whether a programmed memory cell is in a parallel state or an anti-parallel state, but the exact mechanism of this process is not detailed in the abstract.
What specific code values are generated by the voltage generator based on the write voltage?
The abstract mentions that the voltage generator generates a code value based on the write voltage, but it does not specify the range or types of code values that can be generated.
Original Abstract Submitted
disclosed is a memory device including a magnetic memory element. the memory device includes a memory cell array including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor for determining whether a programmed memory cell is in a parallel state or anti-parallel state, a voltage generator configured to generate a code value based on the value of the write voltage, and a write driver configured to drive a write current based on the code value, the write current being a current for storing data in the first region.
