US Patent Application 17804795. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE simplified abstract

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MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE

Organization Name

International Business Machines Corporation

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Koichi Motoyama of Clifton Park NY (US)

Scott A. Devries of Albany NY (US)

Chih-Chao Yang of Glenmont NY (US)

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804795 titled 'MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE

Simplified Explanation

The patent application describes a memory device with a magnetic tunnel junction pillar and a sidewall spacer.

  • The memory device includes a magnetic tunnel junction pillar and a sidewall spacer.
  • The sidewall spacer is placed along the sidewalls of the magnetic tunnel junction pillar.
  • The uppermost surface of the sidewall spacer is at the same level as the uppermost surface of the magnetic tunnel junction pillar.
  • A dielectric hardmask made of an amorphous dielectric material is placed above a portion of the uppermost surface of the magnetic tunnel junction pillar.
  • The dielectric hardmask has a hemispherical shape.
  • A top electrode surrounds the dielectric hardmask and is located above the uppermost surface of the sidewall spacer.
  • The top electrode also extends outwards from the dielectric hardmask and covers another portion of the uppermost surface of the magnetic tunnel junction pillar.


Original Abstract Submitted

A memory device includes a magnetic tunnel junction pillar above a bottom electrode. A sidewall spacer is disposed along sidewalls of the magnetic tunnel junction pillar with an uppermost surface of the sidewall spacer being coplanar with an uppermost surface of the magnetic tunnel junction pillar. A dielectric hardmask composed of an amorphous dielectric material is disposed above a first portion of the uppermost surface of the magnetic tunnel junction pillar, the dielectric hardmask includes a hemispherical shape. A top electrode is located surrounding the dielectric hardmask and above the uppermost surface of the sidewall spacer and a second portion of the uppermost surface of the magnetic tunnel junction pillar extending outwards from the dielectric hardmask.

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