18519085. MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shy-Jay Lin of Hsinchu County (TW)
Wilman Tsai of Saratoga CA (US)
Ming-Yuan Song of Hsinchu City (TW)
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519085 titled 'MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a memory stack consisting of a spin-orbit torque layer, a magnetic bias layer, and a free layer. The magnetic bias layer has a first magnetic anisotropy and is in physical contact with the spin-orbit torque layer, while the free layer has a second magnetic anisotropy perpendicular to the first.
- Memory stack design with spin-orbit torque layer, magnetic bias layer, and free layer
- Magnetic bias layer in contact with spin-orbit torque layer with specific magnetic anisotropy
- Free layer adjacent to spin-orbit torque layer with different magnetic anisotropy
- Optimization for memory storage and retrieval
Potential Applications
- Data storage devices
- Magnetic random-access memory (MRAM)
- Spintronic devices
Problems Solved
- Improving memory stack performance
- Enhancing data storage capacity
- Increasing data transfer speeds
Benefits
- Higher efficiency in memory operations
- Enhanced reliability of memory devices
- Improved overall performance of data storage systems
Original Abstract Submitted
Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.
