17526646. MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING simplified abstract (International Business Machines Corporation)

From WikiPatents
Jump to navigation Jump to search

MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING

Organization Name

International Business Machines Corporation

Inventor(s)

Pouya Hashemi of Purchase NY (US)

Jonathan Zanhong Sun of Shrub Oak NY (US)

Guohan Hu of Yorktown Heights NY (US)

Saba Zare of White Plains NY (US)

MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17526646 titled 'MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING

Simplified Explanation

The abstract describes a memory structure called magnetoresistive random access memory (MRAM) that includes a seeding area with a tunnel barrier seed layer and a wider chemical templating layer. The structure also has redeposited metallic material on the sidewall of the tunnel barrier seed layer to shunt that area. This memory structure has reduced resistance and minimal tunnel magnetoresistance (TMR) loss penalty.

  • The memory structure is called magnetoresistive random access memory (MRAM).
  • It includes a seeding area with a tunnel barrier seed layer.
  • The chemical templating layer on top of the seed layer is wider than the magnetic tunnel junction (MTJ) structure.
  • Redeposited metallic material is located on the sidewall of the tunnel barrier seed layer to shunt that area.
  • The memory structure has reduced resistance.
  • It also has minimal tunnel magnetoresistance (TMR) loss penalty.

Potential Applications

  • MRAM can be used in various electronic devices such as computers, smartphones, and IoT devices.
  • It can be used as a non-volatile memory solution, providing fast read and write speeds.

Problems Solved

  • The memory structure reduces resistance, which can improve the overall performance of the MRAM.
  • By minimizing the tunnel magnetoresistance (TMR) loss penalty, the memory structure ensures reliable and efficient data storage and retrieval.

Benefits

  • The reduced resistance of the memory structure improves the efficiency and speed of data access.
  • The minimal TMR loss penalty ensures reliable and accurate data storage.
  • MRAM technology offers non-volatile memory capabilities, allowing data to be retained even when power is lost.


Original Abstract Submitted

A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

Retrieved from "http://wikipatents.org/index.php?title=17526646._MRAM_STRUCTURE_WITH_ENHANCED_MAGNETICS_USING_SEED_ENGINEERING_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23567"