18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yi Yang of Fremont CA (US)

Dongna Shen of San Jose CA (US)

Yu-Jen Wang of San Jose CA (US)

Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158086 titled 'Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices

Simplified Explanation

The abstract describes a magnetic tunneling junction (MTJ) structure that includes various layers and electrodes to prevent shorting between metal re-deposition layers. Here are the bullet points explaining the patent/innovation:

  • The MTJ structure consists of a pinned layer, a barrier layer, a second metal re-deposition layer, a free layer, a top electrode, and dielectric spacers.
  • The pinned layer is located on a bottom electrode, and the barrier layer is on top of the pinned layer.
  • The second metal re-deposition layer is present on the sidewalls of both the barrier layer and the pinned layer.
  • The free layer is positioned on the barrier layer and has a smaller width compared to the pinned layer.
  • The top electrode, having the same width as the free layer, is placed on top of the free layer.
  • Sidewalls of the free layer and top electrode are covered with a first metal re-deposition layer.
  • Dielectric spacers are added to the sidewalls of the free layer and top electrode, covering the first metal re-deposition layer.
  • The combination of the free layer, top electrode, and dielectric spacers has the same width as the pinned layer.
  • The dielectric spacers serve the purpose of preventing shorting between the first and second metal re-deposition layers.

Potential applications of this technology:

  • Magnetic storage devices (e.g., hard disk drives)
  • Magnetic random-access memory (MRAM)
  • Magnetic sensors
  • Spintronics-based devices

Problems solved by this technology:

  • Preventing shorting between metal re-deposition layers in the MTJ structure
  • Ensuring proper functionality and reliability of the MTJ structure

Benefits of this technology:

  • Improved performance and reliability of magnetic tunneling junction structures
  • Enhanced data storage capabilities
  • Increased efficiency and accuracy of magnetic sensors
  • Enables the development of more advanced spintronics-based devices.


Original Abstract Submitted

A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.

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