17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ashim Dutta of Clifton Park NY (US)

Dominik Metzler of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

Theodorus E. Standaert of Clifton Park NY (US)

MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17644349 titled 'MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES

Simplified Explanation

The abstract describes a memory device with a modified top electrode contact, specifically for a magnetic random-access memory (MRAM) stack. The device includes a memory pillar composed of a bottom electrode, MRAM stack, and top electrode. It also includes an encapsulation layer and a metal cap.

  • The memory device has a modified top electrode contact for improved performance.
  • The device includes a memory pillar with a bottom electrode, MRAM stack, and top electrode.
  • An encapsulation layer is present along the sidewalls of the bottom electrode, MRAM stack, and bottom portion of the top electrode.
  • A metal cap is located above the top portion of the top electrode and the encapsulation layer.
  • A second conductive interconnect is formed above the metal cap, wrapping around the encapsulation layer.

Potential applications of this technology:

  • Memory devices in various electronic devices such as computers, smartphones, and tablets.
  • Data storage in cloud computing and data centers.
  • High-speed data processing in artificial intelligence and machine learning applications.

Problems solved by this technology:

  • Improved performance and reliability of memory devices.
  • Enhanced data storage and retrieval capabilities.
  • Reduction in power consumption and heat generation.

Benefits of this technology:

  • Higher data transfer rates and faster access times.
  • Increased memory density and capacity.
  • Improved durability and longevity of memory devices.
  • Lower power consumption and improved energy efficiency.


Original Abstract Submitted

A memory device with modified top electrode contact includes a memory pillar composed of a bottom electrode, a magnetic random-access memory (MRAM) stack above the bottom electrode, and a top electrode above the MRAM stack. A first portion of an encapsulation layer is disposed along opposite sidewalls of the bottom electrode, on opposite sidewalls of the MRAM stack and on opposite sidewalls of a bottom portion of the top electrode, a second portion of the encapsulation layer is located above a second dielectric layer. A metal cap is located above an uppermost surface and opposite sidewalls of a top portion of the top electrode and above an uppermost surface of the first portion of the encapsulation layer. A second conductive interconnect is formed above a top surface of the metal cap wrapping around opposite sidewalls of the first portion of the encapsulation layer and opposite sidewalls of the metal cap.

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