17956938. SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract (International Business Machines Corporation)

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SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

Organization Name

International Business Machines Corporation

Inventor(s)

Pouya Hashemi of Purchase NY (US)

Christopher Safranski of Yorktown Heights NY (US)

SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956938 titled 'SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

Simplified Explanation

The abstract describes a patent application for a magnetic random access memory (MRAM) apparatus that includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) layer beneath the MTJ stack, and a dielectric pillar beneath the SOT layer and MTJ stack, with the SOT layer having a stepped profile.

  • Magnetic random access memory (MRAM) apparatus
  • Includes a magnetic tunnel junction (MTJ) stack
  • Contains a spin-orbit torque (SOT) layer below the MTJ stack
  • Utilizes a dielectric pillar beneath the SOT layer and MTJ stack
  • The SOT layer features a stepped profile

Potential Applications

This technology could be applied in:

  • Data storage devices
  • Computing systems
  • Magnetic sensors

Problems Solved

  • Improved data storage efficiency
  • Enhanced computing performance
  • Increased reliability of magnetic sensors

Benefits

  • Faster data access
  • Lower power consumption
  • Longer lifespan of devices

Potential Commercial Applications

Optimized for:

  • Consumer electronics
  • Industrial automation
  • Automotive systems

Possible Prior Art

One example of prior art in this field is the use of magnetic tunnel junctions in MRAM technology.

Unanswered Questions

How does the stepped profile of the SOT layer impact the performance of the MRAM apparatus?

The abstract does not provide specific details on how the stepped profile of the SOT layer affects the functionality of the MRAM apparatus.

What materials are used in the dielectric pillar of the MRAM apparatus?

The abstract does not mention the specific materials utilized in the dielectric pillar of the MRAM apparatus.


Original Abstract Submitted

A magnetic random access memory (MRAM) apparatus includes a magnetic tunnel junction (MTJ) stack; a spin-orbit-torque (SOT) layer that underlies the MTJ stack; and a dielectric pillar that underlies the SOT layer and the MTJ stack. The SOT layer has a stepped profile.

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