Kioxia corporation (20240099158). MAGNETIC MEMORY DEVICE simplified abstract
Contents
- 1 MAGNETIC MEMORY DEVICE
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099158 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The abstract describes a magnetic memory device with specific wiring lines and memory cells stacked in a particular direction.
- The magnetic memory device includes a first wiring line extending in a first direction, a second wiring line on an upper layer side of the first wiring line extending in a second direction intersecting the first direction, and a memory cell with a magnetoresistance effect element and a switching element stacked in a third direction.
- The first wiring line consists of a first conductive layer and a second conductive layer made of a material containing carbon (C).
Potential Applications
This technology could be applied in various electronic devices such as computers, smartphones, and data storage systems.
Problems Solved
This technology provides a more efficient and compact way to store and retrieve data in electronic devices.
Benefits
The benefits of this technology include faster data access, higher storage capacity, and improved energy efficiency in electronic devices.
Potential Commercial Applications
A potential commercial application for this technology could be in the development of next-generation memory devices for consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the development of other types of magnetic memory devices with similar stacking configurations.
Unanswered Questions
How does this technology compare to traditional memory devices in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and traditional memory devices in terms of speed and efficiency.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This article does not address the potential challenges in implementing this technology on a large scale for commercial production.
Original Abstract Submitted
according to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. the first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (c).
