17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Sergey Faleev of Santa Clara CA (US)

Panagiotis Charilaos Filippou of Fremont CA (US)

Yari Ferrante of San Jose CA (US)

Chirag Garg of San Jose CA (US)

Mahesh Samant of San Jose CA (US)

Jaewoo Jeong of San Jose CA (US)

MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17688196 titled 'MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE

Simplified Explanation

The patent application describes integrated circuit devices that consist of multiple layers, including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer with a hexagonal crystal structure. The first magnetic layer is made up of a multi-layered structure of nCo/mX, where n and m are numbers of atomic layers and X can be Ni, Ag, Au, Pt, Pd, or Cu. The first magnetic layer is magnetic at room temperature and also has a hexagonal crystal structure.

• The patent application describes integrated circuit devices with specific layer compositions and crystal structures.
• The first magnetic layer is made up of a multi-layered structure of nCo/mX, where n and m are numbers of atomic layers.
• The tunnel barrier layer has a hexagonal crystal structure and is positioned between the first and second magnetic layers.
• The first magnetic layer is magnetic at room temperature and also has a hexagonal crystal structure.
• The X element in the first magnetic layer can be Ni, Ag, Au, Pt, Pd, or Cu.
• The values of n and m can range within specific limits.

Potential Applications

• Integrated circuits for various electronic devices
• Data storage devices
• Magnetic sensors
• Spintronic devices

Problems Solved

• Improved magnetic properties at room temperature
• Enhanced performance and functionality of integrated circuits
• Increased data storage capacity
• More efficient magnetic sensors

Benefits

• Higher magnetic stability
• Improved data transfer rates
• Greater reliability and durability
• Enhanced functionality and performance of electronic devices

Original Abstract Submitted

Integrated circuit devices may include a first magnetic layer, a second magnetic layer, and a tunnel barrier layer that is between the first magnetic layer and the second magnetic layer and has a hexagonal crystal structure. The first magnetic layer may include a multi-layered structure of nCo/mX that is magnetic at room temperature and has a hexagonal crystal structure, and X may be Ni, Ag, Au, Pt, Pd or Cu. n and m are each numbers of atomic layers, n may range from 0.5 to 3.5, and m may range from 0.5 to 4.5.