17970788. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
Organization Name
Inventor(s)
Sanghwan Park of Suwon-si (KR)
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17970788 titled 'MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
Simplified Explanation
The abstract describes a magnetoresistive random access memory (MRAM) device that includes several layers and materials to improve its performance.
- The device includes a pinned layer, a tunnel barrier layer, a free layer structure, and an upper oxide layer.
- The free layer structure consists of multiple magnetic layers and metal insertion layers placed between them.
- Each metal insertion layer is made of a non-magnetic metal material that is doped with a magnetic material.
- The metal insertion layers are spaced apart from each other.
Potential Applications
- MRAM devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
- The improved performance of this MRAM device can enhance the speed and efficiency of data storage and retrieval.
Problems Solved
- Traditional MRAM devices may have limitations in terms of speed, density, and power consumption.
- The use of metal insertion layers doped with magnetic material helps to overcome these limitations and improve the performance of the MRAM device.
Benefits
- The use of metal insertion layers doped with magnetic material enhances the magnetic properties of the MRAM device.
- This leads to improved performance in terms of speed, density, and power consumption.
- The device can provide faster data storage and retrieval, higher memory density, and lower power consumption compared to traditional MRAM devices.
Original Abstract Submitted
A magnetoresistive random access memory device includes a pinned layer; a tunnel barrier layer on the pinned layer; a free layer structure on the tunnel barrier layer, the free layer structure including a plurality of magnetic layers and a plurality of metal insertion layers between the magnetic layers; and an upper oxide layer on the free layer structure, wherein each of the metal insertion layers includes a non-magnetic metal material doped with a magnetic material, and the metal insertion layers are spaced apart from each other.
