17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Sergey Faleev of Santa Clara CA (US)

Panagiotis Charilaos Filippou of Fremont CA (US)

Yari Ferrante of San Jose CA (US)

Chirag Garg of San Jose CA (US)

Mahesh Samant of San Jose CA (US)

Jaewoo Jeong of San Jose CA (US)

MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17688196 titled 'MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE

Simplified Explanation

The patent application describes integrated circuit devices that consist of multiple layers, including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer with a hexagonal crystal structure. The first magnetic layer is made up of a multi-layered structure of nCo/mX, where n and m are numbers of atomic layers and X can be Ni, Ag, Au, Pt, Pd, or Cu. The first magnetic layer is magnetic at room temperature and also has a hexagonal crystal structure.

  • The patent application describes integrated circuit devices with specific layer compositions and crystal structures.
  • The first magnetic layer is made up of a multi-layered structure of nCo/mX, where n and m are numbers of atomic layers.
  • The tunnel barrier layer has a hexagonal crystal structure and is positioned between the first and second magnetic layers.
  • The first magnetic layer is magnetic at room temperature and also has a hexagonal crystal structure.
  • X in the first magnetic layer can be Ni, Ag, Au, Pt, Pd, or Cu.
  • The values of n and m can range within specific limits.

Potential Applications

  • This technology can be used in integrated circuit devices, such as memory devices or logic devices.
  • It can be applied in various electronic devices, including computers, smartphones, and tablets.

Problems Solved

  • The patent application addresses the need for integrated circuit devices with specific layer compositions and crystal structures.
  • It solves the problem of achieving a magnetic first layer that is stable at room temperature and has a hexagonal crystal structure.

Benefits

  • The use of specific layer compositions and crystal structures can enhance the performance and reliability of integrated circuit devices.
  • The magnetic first layer being stable at room temperature ensures consistent functionality.
  • The hexagonal crystal structure of the first magnetic layer provides additional stability and desired magnetic properties.


Original Abstract Submitted

Integrated circuit devices may include a first magnetic layer, a second magnetic layer, and a tunnel barrier layer that is between the first magnetic layer and the second magnetic layer and has a hexagonal crystal structure. The first magnetic layer may include a multi-layered structure of nCo/mX that is magnetic at room temperature and has a hexagonal crystal structure, and X may be Ni, Ag, Au, Pt, Pd or Cu. n and m are each numbers of atomic layers, n may range from 0.5 to 3.5, and m may range from 0.5 to 4.5.

Retrieved from "http://wikipatents.org/index.php?title=17688196._MAGNETIC_TUNNEL_JUNCTION_INCLUDING_HEXAGONAL_MULTI-LAYERED_STRUCTURE_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=25671"