18051857. MAGNETIC MEMORY DEVICES AND METHODS FOR INITIALIZING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
MAGNETIC MEMORY DEVICES AND METHODS FOR INITIALIZING THE SAME
Organization Name
Inventor(s)
Stuart Papworth Parkin of Halle (DE)
Ung Hwan Pi of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICES AND METHODS FOR INITIALIZING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18051857 titled 'MAGNETIC MEMORY DEVICES AND METHODS FOR INITIALIZING THE SAME
Simplified Explanation
The abstract describes a magnetic memory device that includes a conductive line and a magnetic track. The magnetic track consists of a lower magnetic layer, a spacer layer, and an upper magnetic layer. There is also a non-magnetic pattern on the spacer layer that overlaps with a portion of the lower magnetic layer. The lower and upper magnetic layers are antiferromagnetically coupled by the spacer layer.
- The magnetic memory device includes a conductive line and a magnetic track.
- The magnetic track consists of a lower magnetic layer, a spacer layer, and an upper magnetic layer.
- A non-magnetic pattern is present on the spacer layer and overlaps with a portion of the lower magnetic layer.
- The lower and upper magnetic layers are antiferromagnetically coupled by the spacer layer.
Potential Applications
- Magnetic memory devices can be used in various electronic devices such as computers, smartphones, and tablets.
- This technology can be applied in data storage systems, allowing for higher storage capacity and faster data access.
Problems Solved
- The magnetic memory device provides a more efficient and compact way of storing data.
- The antiferromagnetic coupling between the lower and upper magnetic layers improves the stability and reliability of the memory device.
Benefits
- The magnetic memory device offers increased storage capacity due to the vertical overlap of the non-magnetic pattern with the lower magnetic layer.
- The antiferromagnetic coupling between the magnetic layers enhances the stability and reliability of the memory device.
- This technology can lead to faster data access and improved performance in electronic devices.
Original Abstract Submitted
A magnetic memory device includes a conductive line extending in a first direction, and a magnetic track extending in the first direction on the conductive line. The magnetic track includes a lower magnetic layer, a spacer layer and an upper magnetic layer sequentially stacked on the conductive line, and a non-magnetic pattern on the spacer layer and adjacent a side of the upper magnetic layer. The non-magnetic pattern vertically overlaps with a portion of the lower magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
