International business machines corporation (20240099148). MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract
Contents
- 1 MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
Organization Name
international business machines corporation
Inventor(s)
Hsueh-Chung Chen of Cohoes NY (US)
Koichi Motoyama of Clifton Park NY (US)
Chanro Park of Clifton Park NY (US)
Yann Mignot of Slingerlands NY (US)
Chih-Chao Yang of Glenmont NY (US)
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099148 titled 'MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
Simplified Explanation
A semiconductor device is described in the patent application, which includes a memory with a magnetic tunnel junction (MTJ) stack, an upper electrode, and at least one dielectric layer. The device also features a top metal layer contact hole, a dielectric liner layer, and a top metal layer contact.
- Memory with MTJ stack and upper electrode
- Dielectric layer surrounding the memory
- Top metal layer contact hole with dielectric liner layer
- Top metal layer contact
Potential Applications
The technology described in this patent application could be used in various electronic devices such as computers, smartphones, and tablets for data storage and processing.
Problems Solved
This technology solves the problem of improving memory storage and access speed in semiconductor devices.
Benefits
The benefits of this technology include faster data access, increased memory storage capacity, and improved overall performance of electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the production of advanced memory chips for consumer electronics, data centers, and other computing devices.
Possible Prior Art
One possible prior art for this technology could be the development of magnetic tunnel junctions in memory devices for improved data storage and access.
Unanswered Questions
How does this technology compare to existing memory technologies in terms of speed and capacity?
This article does not provide a direct comparison between this technology and existing memory technologies in terms of speed and capacity.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This article does not address the potential challenges in implementing this technology on a large scale for commercial production.
Original Abstract Submitted
a semiconductor device is provided. the semiconductor device includes a memory including a bottom electrode, a magnetic tunnel junction (mtj) stack on the bottom electrode, and an upper electrode on the mtj stack. the semiconductor device also includes at least one dielectric layer formed around the memory, wherein a top metal layer contact hole is formed in the at least one dielectric layer, a dielectric liner layer formed in the top metal contact hole, and a top metal layer contact in the top metal layer contact hole.
