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Category:Tahir Ghani of Portland OR (US)
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Pages in category "Tahir Ghani of Portland OR (US)"
The following 71 pages are in this category, out of 71 total.
1
- 17846086. PACKAGE ARCHITECTURE WITH VERTICAL STACKING OF INTEGRATED CIRCUIT DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation)
- 17846109. PACKAGE ARCHITECTURE WITH VERTICAL STACKING OF INTEGRATED CIRCUIT DIES HAVING PLANARIZED EDGES AND MULTI-SIDE ROUTING simplified abstract (Intel Corporation)
- 17846129. PACKAGE ARCHITECTURE WITH VERTICALLY STACKED BRIDGE DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation)
- 17846153. PACKAGE ARCHITECTURE OF THREE-DIMENSIONAL INTERCONNECT CUBE WITH INTEGRATED CIRCUIT DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation)
- 17846173. PACKAGE ARCHITECTURE OF PHOTONIC SYSTEM WITH VERTICALLY STACKED DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation)
- 17850769. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING COMMON METAL GATES AND HAVING GATE DIELECTRICS WITH AN OPPOSITE POLARITY DIPOLE LAYER simplified abstract (Intel Corporation)
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850779. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA simplified abstract (Intel Corporation)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17851960. INTEGRATED CIRCUIT STRUCTURES HAVING AOI GATES WITH ROUTING ACROSS NANOWIRES simplified abstract (Intel Corporation)
- 17851967. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND POWER DELIVERY simplified abstract (Intel Corporation)
- 17930801. FULL WAFER DEVICE WITH BACK SIDE PASSIVE ELECTRONIC COMPONENTS simplified abstract (Intel Corporation)
- 17930825. FULL WAFER DEVICE WITH FRONT SIDE PASSIVE ELECTRONIC COMPONENTS simplified abstract (Intel Corporation)
- 17930841. FULL WAFER DEVICE WITH BACK SIDE INTERCONNECTS AND WAFER-SCALE INTEGRATION simplified abstract (Intel Corporation)
- 17933589. HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY simplified abstract (Intel Corporation)
- 17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation)
- 17956775. SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 17956779. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract (Intel Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958283. ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (Intel Corporation)
- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958288. PLUG IN A METAL LAYER simplified abstract (Intel Corporation)
- 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)
- 17958291. PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 18312847. STATIC RANDOM-ACCESS MEMORY DEVICES WITH ANGLED TRANSISTORS simplified abstract (Intel Corporation)
- 18314862. LOGIC CIRCUITS USING VERTICAL TRANSISTORS WITH BACKSIDE SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18314875. INTEGRATED CIRCUIT DEVICES WITH ANGLED TRANSISTORS AND ANGLED ROUTING TRACKS simplified abstract (Intel Corporation)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18383370. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
- 18494384. DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS simplified abstract (Intel Corporation)
- 18511604. NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
I
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240105582). LOW TEMPERATURE CAPACITIVELY COUPLED DEVICE FOR LOW NOISE CIRCUITS simplified abstract
- Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract
- Intel corporation (20240105585). SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS simplified abstract
- Intel corporation (20240105596). INTEGRATED CIRCUIT DEVICES WITH ANGLED INTERCONNECTS simplified abstract
- Intel corporation (20240105597). DIELECTRIC PLUGS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105598). DIFFERENTIATED CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105599). MUSHROOMED VIA STRUCTURES FOR TRENCH CONTACT OR GATE CONTACT simplified abstract
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract
- Intel corporation (20240105677). RECONSTITUTED WAFER WITH SIDE-STACKED INTEGRATED CIRCUIT DIE simplified abstract
- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract
- Intel corporation (20240105716). INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG simplified abstract
- Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract
- Intel corporation (20240105854). TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES simplified abstract
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract
- Intel corporation (20240107749). ARRANGEMENTS FOR MEMORY WITH ONE ACCESS TRANSISTOR FOR MULTIPLE CAPACITORS simplified abstract
- Intel corporation (20240113017). PLUG IN A METAL LAYER simplified abstract
- Intel corporation (20240113019). SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240113025). ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract
- Intel corporation (20240113104). FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113108). WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113109). PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113111). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
U
- US Patent Application 18227233. THIN FILM TRANSISTORS HAVING DOUBLE GATES simplified abstract
- US Patent Application 18228139. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING simplified abstract
- US Patent Application 18232670. WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION simplified abstract