US Patent Application 18232670. WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION simplified abstract

WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION

Organization Name

Intel Corporation

Inventor(s)

Joseph Steigerwald of Forest Grove OR (US)

Tahir Ghani of Portland OR (US)

Oleg Golonzka of Beaverton OR (US)

WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232670 titled 'WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION

Simplified Explanation

- The patent application describes a new structure for a wrap-around source/drain trench contact in a semiconductor device. - The structure includes multiple semiconductor fins extending from a substrate, with a channel region between each pair of source/drain regions. - An epitaxial semiconductor layer covers the top and sidewall surfaces of each fin, creating narrow gaps between adjacent fins. - Two source/drain trench contacts are connected to the epitaxial semiconductor layers. - The source/drain trench contacts consist of a conformal metal layer and a fill metal. - The conformal metal layer conforms to the epitaxial semiconductor layers. - The fill metal includes a plug and a barrier layer. - The plug fills a contact trench above the fins and the conformal metal layer. - The barrier layer lines the plug to prevent interdiffusion of materials between the conformal metal layer and the plug.

Original Abstract Submitted

A wrap-around source/drain trench contact structure is described. A plurality of semiconductor fins extend from a semiconductor substrate. A channel region is disposed in each fin between a pair of source/drain regions. An epitaxial semiconductor layer covers the top surface and sidewall surfaces of each fin over the source/drain regions, defining high aspect ratio gaps between adjacent fins. A pair of source/drain trench contacts are electrically coupled to the epitaxial semiconductor layers. The source/drain trench contacts comprise a conformal metal layer and a fill metal. The conformal metal layer conforms to the epitaxial semiconductor layers. The fill metal comprises a plug and a barrier layer, wherein the plug fills a contact trench formed above the fins and the conformal metal layer, and the barrier layer lines the plug to prevent interdiffusion of the conformal metal layer material and plug material.