Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract
Contents
- 1 SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Tahir Ghani of Portland OR (US)
Anand Murthy of Portland OR (US)
Wilfred Gomes of Portland OR (US)
Sagar Suthram of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105700 titled 'SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES
Simplified Explanation
The embodiment of an integrated circuit (IC) device includes multiple layers of wide bandgap (WBG)-based circuitry and multiple layers of silicon (Si)-based circuitry that are monolithically bonded together. Electrical connections are made between the WBG-based circuits and Si-based circuits in the respective layers.
- Wide bandgap (WBG) and silicon (Si) based circuitry are integrated in a single IC device.
- Multiple layers of WBG-based circuitry are bonded to multiple layers of Si-based circuitry.
- Electrical connections are established between WBG-based circuits and Si-based circuits within the IC device.
Potential Applications
This technology could be applied in:
- Power electronics
- RF and microwave applications
- High-speed communication systems
Problems Solved
This technology helps in:
- Improving efficiency in power electronics
- Enhancing performance in RF and microwave applications
- Enabling faster communication systems
Benefits
The benefits of this technology include:
- Increased efficiency
- Enhanced performance
- Improved integration of different circuitry types
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor industry
- Electronics manufacturing
- Telecommunications sector
Possible Prior Art
One possible prior art could be the integration of different types of circuitry in a single IC device, but the specific combination of WBG-based and Si-based circuitry as described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing hybrid bonding techniques in terms of performance and cost?
This article does not provide a direct comparison with existing hybrid bonding techniques in terms of performance and cost. It would be interesting to see a detailed analysis of these aspects to understand the advantages of this technology better.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges in scaling up this technology for mass production. It would be crucial to understand the scalability issues and how they can be overcome to bring this technology to the market efficiently.
Original Abstract Submitted
an embodiment of an integrated circuit (ic) device may include a plurality of layers of wide bandgap (wbg)-based circuitry and a plurality of layers of silicon (si)-based circuitry monolithically bonded to the plurality of layers of wbg-based circuitry, with one or more electrical connections between respective wbg-based circuits in the plurality of layers of wbg-based circuitry and si-based circuits in the plurality of layers of si-based circuitry. in some embodiments, a wafer-scale wbg-based ic is hybrid bonded or layer transfer bonded to a wafer-scale si-based ic. other embodiments are disclosed and claimed.
