US Patent Application 18227233. THIN FILM TRANSISTORS HAVING DOUBLE GATES simplified abstract
Contents
THIN FILM TRANSISTORS HAVING DOUBLE GATES
Organization Name
Inventor(s)
Abhishek A. Sharma of Hillsboro OR (US)
Van H. Le of Beaverton OR (US)
Jack T. Kavalieros of Portland OR (US)
Tahir Ghani of Portland OR (US)
Gilbert Dewey of Hillsboro OR (US)
THIN FILM TRANSISTORS HAVING DOUBLE GATES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18227233 titled 'THIN FILM TRANSISTORS HAVING DOUBLE GATES
Simplified Explanation
The patent application describes thin film transistors with double gates.
- Integrated circuit structure with insulator layer, first gate stack, and polycrystalline channel material layer.
- Second gate stack is placed on a portion of the polycrystalline channel material layer.
- First conductive contact is adjacent to one side of the second gate stack.
- Second conductive contact is adjacent to the other side of the second gate stack.
- The invention allows for improved control and performance of the thin film transistors.
Original Abstract Submitted
Thin film transistors having double gates are described. In an example, an integrated circuit structure includes an insulator layer above a substrate. A first gate stack is on the insulator layer. A polycrystalline channel material layer is on the first gate stack. A second gate stack is on a first portion of the polycrystalline channel material layer, the second gate stack having a first side opposite a second side. A first conductive contact is adjacent the first side of the second gate stack, the first conductive contact on a second portion of the channel material layer. A second conductive contact is adjacent the second side of the second gate stack, the second conductive contact on a third portion of the channel material layer.
