17850779. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA simplified abstract (Intel Corporation)

INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA

Organization Name

Intel Corporation

Inventor(s)

Mohit Haran of Hillsboro OR (US)

Sukru Yemenicioglu of Portland OR (US)

Pratik Patel of Portland OR (US)

Charles H. Wallace of Portland OR (US)

Leonard P. Guler of Hillsboro OR (US)

Conor P. Puls of Portland OR (US)

Makram Abd El Qader of Hillsboro OR (US)

Tahir Ghani of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA - A simplified explanation of the abstract

This abstract first appeared for US patent application 17850779 titled 'INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA

Simplified Explanation

The patent application describes integrated circuit structures with recessed self-aligned deep boundary vias. Here is a simplified explanation of the abstract:

• The integrated circuit structure includes gate lines and trench contacts.
• The trench contacts cover source or drain structures and alternate with the gate lines.
• A backside metal routing layer is present beneath some of the gate lines and trench contacts.
• A conductive structure connects the backside metal routing layer to one of the trench contacts.
• The conductive structure consists of a pillar portion in contact with the trench contact and a line portion extending along the backside metal routing layer.

Potential applications of this technology:

• Integrated circuits in electronic devices such as smartphones, computers, and IoT devices.
• High-performance computing systems.
• Automotive electronics.
• Aerospace and defense systems.

Problems solved by this technology:

• Improved electrical connectivity between different components of an integrated circuit.
• Enhanced performance and reliability of integrated circuits.
• Simplified manufacturing process by using self-aligned deep boundary vias.

Benefits of this technology:

• Increased speed and efficiency of integrated circuits.
• Reduced power consumption.
• Improved signal integrity and reduced noise.
• Compact design and space-saving in integrated circuit layouts.
• Cost-effective manufacturing process.

Original Abstract Submitted

Integrated circuit structures having recessed self-aligned deep boundary vias are described. For example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts extends over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A backside metal routing layer is extending beneath one or more of the plurality of gate lines and beneath one or more of the plurality of trench contacts. A conductive structure couples the backside metal routing layer to one of the one or more of the plurality of trench contacts. The conductive structure includes a pillar portion in contact with the one of the one or more of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.