17933589. HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY simplified abstract (Intel Corporation)

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

Organization Name

Intel Corporation

Inventor(s)

Abhishek A. Sharma of Hillsboro OR (US)

Tahir Ghani of Portland OR (US)

Wilfred Gomes of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Pushkar Sharad Ranade of San Jose CA (US)

Sagar Suthram of Portland OR (US)

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17933589 titled 'HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

Simplified Explanation

The abstract describes a patent application related to hybrid manufacturing of access transistors for memory in IC devices. The patent explores combining components fabricated by different manufacturers to achieve advantages in terms of performance, density, number of active memory layers, fabrication approaches, and more.

• An IC device may include a support, first and second circuits over different portions of the support, a scribe line between the circuits, and electrical traces extending over the scribe line.
• Another aspect involves an IC device with a support, a memory array comprising a first circuit, one or more layers of capacitors, and a second circuit over different portions of the support.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of integrated circuits, memory devices, and other electronic components where combining components from different manufacturers can lead to improved performance and efficiency.

Problems Solved

This technology addresses the challenge of optimizing IC devices by utilizing components from various manufacturers, allowing for enhanced performance, increased memory capacity, and more efficient fabrication processes.

Benefits

The benefits of this technology include improved performance, increased memory density, enhanced fabrication flexibility, and potentially reduced costs associated with manufacturing IC devices.

Potential Commercial Applications

The hybrid manufacturing approach outlined in the patent application could have commercial applications in the semiconductor industry, memory device manufacturing, and other electronic sectors where optimizing component integration is crucial for product development and innovation.

Possible Prior Art

One possible prior art in this field could be the use of multi-chip modules (MCMs) where separate chips from different manufacturers are combined on a single substrate to create a functional electronic system.

Unanswered Questions

How does the hybrid manufacturing process impact the overall reliability of IC devices?

The article does not delve into the potential effects of combining components from different manufacturers on the reliability and longevity of IC devices. Further research or testing may be needed to address this aspect.

Are there any specific compatibility issues that may arise when integrating components from different manufacturers in IC devices?

The article does not discuss any potential compatibility challenges that could arise when combining components fabricated by different manufacturers. Understanding and mitigating these issues could be crucial for successful implementation of the hybrid manufacturing approach.

Original Abstract Submitted

Hybrid manufacturing of access transistors for memory, presented herein, explores how IC components fabricated by different manufacturers may be combined in an IC device to achieve advantages in terms of, e.g., performance, density, number of active memory layers, fabrication approaches, and so on. In one aspect, an IC device may include a support, a first circuit over a first portion of the support, a second circuit over a second portion of the support, a scribe line between the first circuit and the second circuit, and one or more electrical traces extending over the scribe line. In another aspect, an IC device may include a support, a memory array, comprising a first circuit over a first portion of the support and one or more layers of capacitors over the first circuit, and a second circuit over a second portion of the support.