17958283. ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (Intel Corporation)
Contents
- 1 ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
Sagar Suthram of Portland OR (US)
Wilfred Gomes of Portland OR (US)
Tahir Ghani of Portland OR (US)
Anand S. Murthy of Portland OR (US)
ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958283 titled 'ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION
Simplified Explanation
The integrated circuit structure described in the abstract includes an interlayer dielectric (ILD) with an opening, a first layer lining the opening, a second layer lining the first layer, and a third layer over the second layer. The second layer is made of a semi-metal or transition metal dichalcogenide (TMD).
- The integrated circuit structure comprises an ILD with an opening.
- A first layer lines the opening, followed by a second layer made of a semi-metal or TMD.
- A third layer is present over the second layer.
Potential Applications
The integrated circuit structure can be used in various electronic devices such as smartphones, tablets, laptops, and other computing devices.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by providing a structure with enhanced conductivity and thermal properties.
Benefits
The integrated circuit structure offers improved conductivity, thermal properties, and overall performance of electronic devices.
Potential Commercial Applications
The technology can be applied in the semiconductor industry for manufacturing advanced integrated circuits with better functionality and efficiency.
Possible Prior Art
One possible prior art could be the use of traditional materials in integrated circuit structures, which may not offer the same level of performance as the semi-metal or TMD used in this innovation.
Unanswered Questions
How does the integration of TMD in the second layer improve the overall performance of the integrated circuit structure?
The integration of TMD in the second layer enhances the conductivity and thermal properties of the structure, leading to improved performance of the integrated circuit.
What are the specific electronic devices that can benefit the most from this integrated circuit structure?
Electronic devices such as high-performance smartphones, tablets, and laptops can benefit the most from this integrated circuit structure due to its enhanced conductivity and thermal properties.
Original Abstract Submitted
Embodiments disclosed herein include an integrated circuit structure. In an embodiment, the integrated circuit structure comprises an interlayer dielectric (ILD), and an opening in the ILD. In an embodiment, a first layer lines the opening, and a second layer lines the first layer. In an embodiment, the second layer comprises a semi-metal or transition metal dichalcogenide (TMD). The integrated circuit structure may further comprise a third layer over the second layer.
