Intel corporation (20240105585). SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS simplified abstract
Contents
- 1 SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
Tahir Ghani of Portland OR (US)
Wilfred Gomes of Portland OR (US)
Sagar Suthram of Portland OR (US)
Anand Murthy of Portland OR (US)
SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105585 titled 'SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS
Simplified Explanation
The abstract describes embodiments of a capacitor in the back-side layers of an IC die, utilizing various solid-state electrolyte materials and electrode combinations.
- Capacitor in IC die back-side layers
- Solid-state electrolyte materials between electrodes
- Materials include indium oxide, indium nitride, gallium oxide, gallium nitride, zinc oxide, zinc nitride, tungsten oxide, tungsten nitride, tin oxide, tin nitride, nickel oxide, nickel nitride, niobium oxide, niobium nitride, cobalt oxide, and cobalt nitride
- Various embodiments disclosed and claimed
Potential Applications
The technology can be applied in various electronic devices, such as smartphones, tablets, laptops, and IoT devices.
Problems Solved
- Improved capacitor performance in IC dies - Enhanced reliability and efficiency of electronic devices - Increased energy storage capacity in a compact space
Benefits
- Higher energy density - Improved power efficiency - Enhanced device performance and longevity
Potential Commercial Applications
"Solid-State Electrolyte Capacitors for Advanced Electronics"
Possible Prior Art
Prior art may include patents or publications related to solid-state electrolyte capacitors in electronic devices.
Unanswered Questions
How does the capacitor placement in the back-side layers affect overall IC performance?
The article does not delve into the specific impact of capacitor placement on the overall performance of the integrated circuit.
Are there any limitations or challenges associated with using the mentioned materials in capacitor construction?
The article does not address any potential limitations or challenges that may arise from utilizing the specified materials in capacitor design.
Original Abstract Submitted
an embodiment of a capacitor in the back-side layers of an ic die may comprise any type of solid-state electrolyte material disposed between electrodes of the capacitor. another embodiment of a capacitor anywhere in an ic die may include one or more materials selected from the group of indium oxide, indium nitride, gallium oxide, gallium nitride, zinc oxide, zinc nitride, tungsten oxide, tungsten nitride, tin oxide, tin nitride, nickel oxide, nickel nitride, niobium oxide, niobium nitride, cobalt oxide, and cobalt nitride between electrodes of the capacitor. other embodiments are disclosed and claimed.
