Pages that link to "Category:Ruilong Xie of Niskayuna NY (US)"
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The following pages link to Category:Ruilong Xie of Niskayuna NY (US):
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (← links)
- International business machines corporation (20240096891). SELF-ALIGNED BACKSIDE CONTACT simplified abstract (← links)
- International business machines corporation (20240096940). BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (← links)
- International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract (← links)
- International business machines corporation (20240096949). DIODES IN NANOSHEET TECHNOLOGY simplified abstract (← links)
- International business machines corporation (20240096951). STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (← links)
- International business machines corporation (20240096952). NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (← links)
- International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (← links)
- International business machines corporation (20240096983). SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (← links)
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (← links)
- International business machines corporation (20240098961). SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (← links)
- International business machines corporation (20240099011). VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (← links)
- Patent Applications Report for 22nd Mar 2024 (← links)
- 17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation) (← links)
- 17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation) (← links)
- 17946740. VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation) (← links)
- 17948664. FLEXIBLE WIRING ARCHITECTURE FOR MULTI-DIE INTEGRATION simplified abstract (International Business Machines Corporation) (← links)
- 17934195. SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract (International Business Machines Corporation) (← links)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation) (← links)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation) (← links)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation) (← links)
- 17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation) (← links)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation) (← links)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation) (← links)
- 17946546. STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (International Business Machines Corporation) (← links)
- 17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation) (← links)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation) (← links)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation) (← links)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation) (← links)
- 17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation) (← links)
- 17932347. VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (International Business Machines Corporation) (← links)
- International business machines corporation (20240105244). STACKED FET WITH THREE-TERMINAL SOT MRAM simplified abstract (← links)
- International business machines corporation (20240105506). LOCAL LINE EXTENSION FOR ENLARGED VIA-TO-LINE CONTACT AREA simplified abstract (← links)
- International business machines corporation (20240105554). TRANSISTORS WITH VIA-TO-BACKSIDE POWER RAIL SPACERS simplified abstract (← links)
- International business machines corporation (20240105590). STACKED FET CONTACT FORMATION simplified abstract (← links)
- International business machines corporation (20240105605). SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract (← links)
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract (← links)
- International business machines corporation (20240105607). BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK simplified abstract (← links)
- International business machines corporation (20240105608). LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY simplified abstract (← links)
- International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract (← links)
- International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract (← links)
- International business machines corporation (20240105611). BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION simplified abstract (← links)
- International business machines corporation (20240105612). BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS simplified abstract (← links)
- International business machines corporation (20240105613). DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC simplified abstract (← links)
- International business machines corporation (20240105614). TRANSISTORS WITH ENHANCED VIA-TO-BACKSIDE POWER RAIL simplified abstract (← links)
- International business machines corporation (20240105768). EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER simplified abstract (← links)
- International business machines corporation (20240105788). LOCAL INTERCONNECT AT BACKSIDE TO ENABLE FLEXIBLE ROUTING ACROSS DIFFERENT CELL simplified abstract (← links)
- International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract (← links)
- International business machines corporation (20240112984). METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (← links)
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (← links)