Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 100 pages are in this category, out of 1,354 total.
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- US Patent Application 17824690. GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 17824915. EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION simplified abstract
- US Patent Application 17826872. SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR OR UNDERLYING TOPOGRAPHY simplified abstract
- US Patent Application 17827755. FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 17879913. SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18151021. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract
- US Patent Application 18181229. FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18227236. HIGH-IMPLANT CHANNEL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- US Patent Application 18227712. SPACER STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18229682. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18231772. RADIO FREQUENCY SWITCH simplified abstract
- US Patent Application 18231847. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING simplified abstract
- US Patent Application 18232159. Channel Structures For Semiconductor Devices simplified abstract
- US Patent Application 18232171. Semiconductor Device With Isolation Structures simplified abstract
- US Patent Application 18232181. Profile Control Of Gate Structures In Semiconductor Devices simplified abstract
- US Patent Application 18232191. Gate Spacers In Semiconductor Devices simplified abstract
- US Patent Application 18232289. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18232510. VTFET WITH BURIED POWER RAILS simplified abstract
- US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18232544. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18232670. WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18343972. Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same simplified abstract
- US Patent Application 18345188. METAL GATE STRUCTURE CUTTING PROCESS simplified abstract
- US Patent Application 18346020. POST-FORMATION MENDS OF DIELECTRIC FEATURES simplified abstract
- US Patent Application 18346511. SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME simplified abstract
- US Patent Application 18349448. INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS simplified abstract
- US Patent Application 18349486. INPUT/OUTPUT DEVICES simplified abstract
- US Patent Application 18349617. SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF simplified abstract
- US Patent Application 18350838. Doping for Semiconductor Device with Conductive Feature simplified abstract
- US Patent Application 18351149. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18352133. Hybrid Channel Semiconductor Device and Method simplified abstract
- US Patent Application 18358112. Semiconductor Device and Method simplified abstract
- US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract
- US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract
- US Patent Application 18358966. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 18359051. SEMICONDUCTOR DEVICE WITH REDUCED LOADING EFFECT simplified abstract
- US Patent Application 18359542. EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract
- US Patent Application 18359597. SELF-ALIGNED INNER SPACER ON GATE-ALL-AROUND STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18360007. FIN END ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18360080. Semiconductor Gate-All-Around Device simplified abstract
- US Patent Application 18360118. Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells simplified abstract
- US Patent Application 18360166. Semiconductor Devices Having Gate Dielectric Layers of Varying Thicknesses and Methods of Forming the Same simplified abstract
- US Patent Application 18360265. INTEGRATED CIRCUITS WITH BACKSIDE POWER RAILS simplified abstract
- US Patent Application 18360457. ACTIVE PATTERN STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
- US Patent Application 18360546. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18360587. METHOD OF FORMING CONTACT METAL simplified abstract
- US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract
- US Patent Application 18361354. FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions simplified abstract
- US Patent Application 18361464. SEMICONDUCTOR DEVICE WITH FIN ISOLATION simplified abstract
- US Patent Application 18361501. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18361592. Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same simplified abstract
- US Patent Application 18361622. LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF simplified abstract
- US Patent Application 18361704. SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18361717. INNER FILLER LAYER FOR MULTI-PATTERNED METAL GATE FOR NANOSTRUCTURE TRANSISTOR simplified abstract
- US Patent Application 18361743. CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18362862. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18363077. INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE simplified abstract
- US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract
- US Patent Application 18365315. Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof simplified abstract
- US Patent Application 18365391. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18365420. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18366004. SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED BACKSIDE POWER RAIL simplified abstract
- US Patent Application 18366210. SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- US Patent Application 18366297. Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same simplified abstract
- US Patent Application 18366352. Interconnect Features With Sharp Corners and Method Forming Same simplified abstract
- US Patent Application 18366370. STRUCTURE FOR REDUCING SOURCE/DRAIN CONTACT RESISTANCE AT WAFER BACKSIDE simplified abstract
- US Patent Application 18366469. CONTACT PLUG STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME simplified abstract
- US Patent Application 18366733. Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate simplified abstract
- US Patent Application 18366763. FinFET Device and Method of Forming Same simplified abstract
- US Patent Application 18366871. GATE STRUCTURE AND METHOD OF FORMING SAME simplified abstract
- US Patent Application 18446113. Semiconductor Structures And Methods Of Forming The Same simplified abstract
- US Patent Application 18446539. METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18446567. NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION simplified abstract
- US Patent Application 18446652. NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL simplified abstract
- US Patent Application 18446664. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18446728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- US Patent Application 18446753. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18446755. MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS simplified abstract
- US Patent Application 18446905. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18446919. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract
- US Patent Application 18446953. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract
- US Patent Application 18446960. DEVICES WITH STRAINED ISOLATION FEATURES simplified abstract
- US Patent Application 18446998. Optimized Proximity Profile for Strained Source/Drain Feature and Method of Fabricating Thereof simplified abstract
- US Patent Application 18447149. SILICON-GERMANIUM FINS AND METHODS OF PROCESSING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447239. HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER simplified abstract
- US Patent Application 18447344. SEMICONDUCTOR DEVICE INTERCONNECTS AND METHODS OF FORMATION simplified abstract
- US Patent Application 18447453. Ferroelectric Semiconductor Device and Method simplified abstract
- US Patent Application 18447467. CIRCUIT DEVICES WITH GATE SEALS simplified abstract
- US Patent Application 18447483. SOURCE/DRAIN FEATURES WITH IMPROVED STRAIN PROPERTIES simplified abstract
- US Patent Application 18447664. CONDUCTIVE RAIL STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18447680. TRANSISTOR SPACER STRUCTURES simplified abstract
- US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18447922. Self-Aligned Structure For Semiconductor Devices simplified abstract
- US Patent Application 18448013. SUPER JUNCTION STRUCTURE simplified abstract
- US Patent Application 18448285. SEMICONDUCTOR DEVICE simplified abstract