US Patent Application 18361743. CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING simplified abstract

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CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ming-Chang Wen of Kaohsiung City (TW)

Chang-Yun Chang of Taipei (TW)

Hsien-Chin Lin of Hsinchu City (TW)

Hung-Kai Chen of Taichung City (TW)

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361743 titled 'CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

Simplified Explanation

The patent application describes a semiconductor structure with various components and layers.

  • The structure includes a substrate and an isolation structure on top of it.
  • There is a fin that extends from the substrate and goes through the isolation structure.
  • A source/drain structure is located on top of the fin.
  • A contact etch stop layer is present on the isolation structure and makes contact with one side of the source/drain structure.
  • A dielectric structure is in contact with the other side of the source/drain structure.
  • The dielectric structure is taller than the source/drain structure.
  • The side faces of the source/drain structure are on opposite sides of the fin in a cross-sectional view.
  • The structure aims to improve the performance and functionality of semiconductor devices.


Original Abstract Submitted

A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

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