US Patent Application 18232159. Channel Structures For Semiconductor Devices simplified abstract
Contents
Channel Structures For Semiconductor Devices
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ding-Kang Shih of New Taipei City (TW)
Pang-Yen Tsai of Jhu-bei City (TW)
Channel Structures For Semiconductor Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232159 titled 'Channel Structures For Semiconductor Devices
Simplified Explanation
The present disclosure relates to channel structures of a semiconductor device and methods for fabricating them.
- The method involves forming a superlattice structure with first and second nanostructured layers on a fin structure.
- The second nanostructured layers are then removed to create multiple gate openings.
- A germanium epitaxial growth layer is formed on the first nanostructured layers at a specific temperature and pressure.
- The temperature and pressure are then increased over a predetermined period of time.
- The germanium epitaxial growth layer is annealed at the increased temperature and pressure to form a cladding layer around the first nanostructured layers.
Original Abstract Submitted
The present disclosure provides channel structures of a semiconductor device and fabricating methods thereof. The method can include forming a superlattice structure with first nanostructured layers and second nanostructured layers on a fin structure. The method can also include removing the second nanostructured layers to form multiple gate openings; forming a germanium epitaxial growth layer on the first nanostructured layers at a first temperature and a first pressure; and increasing the first temperature to a second temperature and increasing the first pressure to a second pressure over a first predetermined period of time. The method can further include annealing the germanium epitaxial growth layer at the second temperature and the second pressure in the chamber over a second predetermined period of time to form a cladding layer surrounding the first nanostructured layers.
