US Patent Application 18360587. METHOD OF FORMING CONTACT METAL simplified abstract
Contents
METHOD OF FORMING CONTACT METAL
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Hsien Huang of Hsinchu (TW)
Hong-Mao Lee of Hsinchu City (TW)
Hsien-Lung Yang of Taipei City (TW)
Yu-Kai Chen of Taipei City (TW)
Wei-Jung Lin of Hsinchu City (TW)
METHOD OF FORMING CONTACT METAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360587 titled 'METHOD OF FORMING CONTACT METAL
Simplified Explanation
The abstract describes a semiconductor device and its components.
- The device includes a source/drain feature, which is a part of the device that allows current to flow in and out.
- A dielectric layer is formed over the source/drain feature, which is an insulating layer that separates different components of the device.
- A contact trench is formed through the dielectric layer to expose the source/drain feature, allowing for electrical connections to be made.
- A titanium nitride (TiN) layer is deposited in the contact trench, which is a material that helps improve the conductivity and stability of the device.
- A cobalt layer is deposited over the TiN layer in the contact trench, which further enhances the conductivity and performance of the device.
Original Abstract Submitted
A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.
