US Patent Application 18447149. SILICON-GERMANIUM FINS AND METHODS OF PROCESSING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract

SILICON-GERMANIUM FINS AND METHODS OF PROCESSING THE SAME IN FIELD-EFFECT TRANSISTORS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yu-Shan Lu of Hsinchu County (TW)

Hung-Ju Chou of Taipei City (TW)

Pei-Ling Gao of Hsinchu (TW)

Chen-Hsuan Liao of Hsinchu (TW)

Chih-Chung Chang of Nantou Count (TW)

Jiun-Ming Kuo of Taipei City (TW)

Che-Yuan Hsu of Hsinchu City (TW)

SILICON-GERMANIUM FINS AND METHODS OF PROCESSING THE SAME IN FIELD-EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447149 titled 'SILICON-GERMANIUM FINS AND METHODS OF PROCESSING THE SAME IN FIELD-EFFECT TRANSISTORS

Simplified Explanation

The patent application describes a semiconductor structure with a SiGe fin protruding from a substrate.

• SiGe fin has a top portion with two sidewalls and a bottom portion with two other sidewalls.
• The first transition region connects the first sidewall to the third sidewall, and the second transition region connects the second sidewall to the fourth sidewall.
• Both transition regions have a tapered profile extending away from the respective sidewalls.
• A Si-containing layer is placed on the top portion of the SiGe fin.
• The Si-containing layer on the first transition region extends away from the first sidewall by a certain lateral distance.
• The Si-containing layer on the second transition region extends away from the second sidewall by a different lateral distance.

Original Abstract Submitted

A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.