US Patent Application 18448013. SUPER JUNCTION STRUCTURE simplified abstract
Contents
SUPER JUNCTION STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Shuai Zhang of Hsinchu (TW)]]
[[Category:Feng Han of Hsinchu (TW)]]
[[Category:Jian Wu of Hsinchu (TW)]]
[[Category:Lian-Jie Li of Hsinchu (TW)]]
[[Category:Zhong-Hao Chen of Hsinchu (TW)]]
SUPER JUNCTION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448013 titled 'SUPER JUNCTION STRUCTURE
Simplified Explanation
The patent application describes a super junction structure with specific features to improve its performance. Here are the key points:
- The structure consists of a substrate with a certain conductivity type.
- An epitaxial layer is placed over the substrate, having the opposite conductivity type.
- A bury layer is present between the epitaxial layer and the substrate, also having the opposite conductivity type.
- A conductive pillar is embedded in the epitaxial layer, having the same conductivity type as the substrate.
- The sidewalls of the conductive pillar are angled in relation to the top surface of the epitaxial layer.
- The bottom surface of the conductive pillar is rounded.
- The top surface of the conductive pillar is aligned with the top surface of the epitaxial layer.
These features aim to enhance the performance and efficiency of the super junction structure.
Original Abstract Submitted
A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.
