US Patent Application 18446953. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446953 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
Simplified Explanation
- The patent application describes a method for forming a crystalline high-k dielectric layer and controlling its crystalline phase and orientation during an anneal process. - The method involves using seeding sections of the dielectric layer as nucleation sites and a capping layer mask during the anneal process to control the crystal growth. - The location of the nucleation sites and the arrangement of the capping layer allow for precise control over the orientation and phase of the crystal growth. - By modifying the dopants and process controls, the phase of the dielectric layer can be adjusted to enhance its permittivity and/or ferroelectric property.
Original Abstract Submitted
A method for forming a crystalline high-k dielectric layer and controlling the crystalline phase and orientation of the crystal growth of the high-k dielectric layer during an anneal process. The crystalline phase and orientation of the crystal growth of the dielectric layer may be controlled using seeding sections of the dielectric layer serving as nucleation sites and using a capping layer mask during the anneal process. The location of the nucleation sites and the arrangement of the capping layer allow the orientation and phase of the crystal growth of the dielectric layer to be controlled during the anneal process. Based on the dopants and the process controls used the phase can be modified to increase the permittivity and/or the ferroelectric property of the dielectric layer.
