US Patent Application 18446567. NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION simplified abstract
Contents
NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ru-Shang Hsiao of Jhubei City (TW)
Ching-Hwanq Su of Tainan City (TW)
I-Shan Huang of Tainan City (TW)
NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446567 titled 'NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION
Simplified Explanation
The patent application describes a semiconductor device that includes a transistor with a channel component and a gate component.
- The gate component is made up of several layers, including a dielectric layer, a first work function metal layer, a fill-metal layer, and a second work function metal layer.
- The purpose of these layers is to control the flow of electrical current in the transistor.
- The use of multiple metal layers allows for more precise control of the transistor's performance.
- This design may lead to improved efficiency and performance in semiconductor devices.
- The patent application provides a detailed description of the materials and processes used to create the device.
Original Abstract Submitted
A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.
