US Patent Application 18229682. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Jui-Chien Huang of Hsinchu (TW)]]

[[Category:Kuo-Cheng Chiang of Hsinchu (TW)]]

[[Category:Chih-Hao Wang of Hsinchu (TW)]]

[[Category:Shi Ning Ju of Hsinchu (TW)]]

[[Category:Guan-Lin Chen of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18229682 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device structure and methods of forming it.

• The structure includes two source/drain epitaxial features, with a first dielectric layer between them.
• There is a first dielectric spacer under the first dielectric layer.
• A second dielectric layer is also under the first dielectric layer and in contact with the first dielectric spacer.
• The second dielectric layer and the first dielectric spacer are made of different materials.

Original Abstract Submitted

A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.