US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract

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Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-Che Hsieh of New Taipei City (TW)

Ching Yu Huang of Hsinchu (TW)

Hsin-Hao Yeh of Taipei City (TW)

Chunyao Wang of Zhubei City (TW)

Tze-Liang Lee of Hsinchu (TW)

Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358508 titled 'Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment

Simplified Explanation

- The patent application describes a method for depositing a silicon nitride layer on a wafer. - The method involves placing the wafer into a process chamber. - A silicon-containing precursor is introduced into the process chamber. - The silicon-containing precursor is then purged from the process chamber. - Hydrogen radicals are introduced into the process chamber. - The hydrogen radicals are then purged from the process chamber. - A nitrogen-containing precursor is introduced into the process chamber. - The nitrogen-containing precursor is then purged from the process chamber.

  • The method provides a way to deposit a silicon nitride layer on a wafer.
  • It involves a series of steps including introducing and purging different precursors and radicals.
  • The method can be used in semiconductor manufacturing processes.
  • It may improve the quality and performance of the silicon nitride layer.
  • The method may offer advantages in terms of efficiency and reliability.


Original Abstract Submitted

A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

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