US Patent Application 18232544. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shih-Yao Lin of New Taipei City (TW)]]

[[Category:Chen-Ping Chen of Toucheng Township (TW)]]

[[Category:Kuei-Yu Kao of Hsinchu (TW)]]

[[Category:Hsiao Wen Lee of Hsinchu City (TW)]]

[[Category:Chih-Han Lin of Hsinchu City (TW)]]

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232544 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device.

• Semiconductor fins are formed on a substrate.
• A first dummy gate is formed over the semiconductor fins.
• A recess is created in the first dummy gate, positioned between the semiconductor fins.
• A dummy fin material is placed in the recess.
• A portion of the dummy fin material is removed to expose the upper surface of the first dummy gate and create a dummy fin.
• A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Original Abstract Submitted

A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.