US Patent Application 18232544. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shih-Yao Lin of New Taipei City (TW)]]

[[Category:Chen-Ping Chen of Toucheng Township (TW)]]

[[Category:Kuei-Yu Kao of Hsinchu (TW)]]

[[Category:Hsiao Wen Lee of Hsinchu City (TW)]]

[[Category:Chih-Han Lin of Hsinchu City (TW)]]

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232544 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device.

  • Semiconductor fins are formed on a substrate.
  • A first dummy gate is formed over the semiconductor fins.
  • A recess is created in the first dummy gate, positioned between the semiconductor fins.
  • A dummy fin material is placed in the recess.
  • A portion of the dummy fin material is removed to expose the upper surface of the first dummy gate and create a dummy fin.
  • A second dummy gate is formed on the exposed upper surface of the first dummy gate.


Original Abstract Submitted

A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.